JPH0363219B2 - - Google Patents

Info

Publication number
JPH0363219B2
JPH0363219B2 JP56040111A JP4011181A JPH0363219B2 JP H0363219 B2 JPH0363219 B2 JP H0363219B2 JP 56040111 A JP56040111 A JP 56040111A JP 4011181 A JP4011181 A JP 4011181A JP H0363219 B2 JPH0363219 B2 JP H0363219B2
Authority
JP
Japan
Prior art keywords
region
dielectric
semiconductor device
oxide film
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56040111A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57154856A (en
Inventor
Kenji Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56040111A priority Critical patent/JPS57154856A/ja
Publication of JPS57154856A publication Critical patent/JPS57154856A/ja
Publication of JPH0363219B2 publication Critical patent/JPH0363219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
JP56040111A 1981-03-19 1981-03-19 Semiconductor device Granted JPS57154856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56040111A JPS57154856A (en) 1981-03-19 1981-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56040111A JPS57154856A (en) 1981-03-19 1981-03-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57154856A JPS57154856A (en) 1982-09-24
JPH0363219B2 true JPH0363219B2 (en]) 1991-09-30

Family

ID=12571736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56040111A Granted JPS57154856A (en) 1981-03-19 1981-03-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57154856A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984004996A1 (en) * 1983-06-13 1984-12-20 Ncr Co Process for fabricating semiconductor structures
JPS6072243A (ja) * 1983-09-28 1985-04-24 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JPS6074452A (ja) * 1983-09-29 1985-04-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS60127740A (ja) * 1983-12-15 1985-07-08 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JPS62274740A (ja) * 1986-05-23 1987-11-28 Nec Corp 半導体装置
US6110798A (en) 1996-01-05 2000-08-29 Micron Technology, Inc. Method of fabricating an isolation structure on a semiconductor substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028387B2 (ja) * 1979-07-12 1985-07-04 松下電器産業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57154856A (en) 1982-09-24

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